TK17J65U Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) High forward transfer admittance: |Yfs| = 12.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (.

* Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.) .